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62.2: Invited Paper : Bridged‐Grain Polycrystalline Silicon Thin‐Film Transistors
Author(s) -
Kwok HoiSing,
Zhou Wei,
Chen Rongsheng,
Zhao Shuyun,
Zhang Meng,
Wong Man,
Chen Shuming,
Chow Thomas
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06355.x
Subject(s) - polycrystalline silicon , materials science , threshold voltage , thin film transistor , subthreshold conduction , transistor , optoelectronics , subthreshold slope , silicon , channel (broadcasting) , engineering physics , voltage , field effect transistor , electrical engineering , nanotechnology , engineering , layer (electronics)
A new structure for thin‐film transistors is proposed and demonstrated, exhibiting the benefits but not the drawbacks of both short‐channel and multi‐junction effects. Simulations are performed to verify the physics of this device structure. All characteristics such as threshold voltage, pseudo subthreshold slope, on‐off current ratio and field‐effect mobility are improved.