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56.5L: Late‐News Paper : All‐Printed Oxide Thin Film Transistor Arrays for High Resolution Active Matrix
Author(s) -
Matsumoto Shinji,
Nakamura Yuki,
Arae Sadanori,
Sone Yuji,
Hirano Yukiko,
Abe Mikiko,
Saotome Ryohichi,
Ueda Naoyuki,
Yamada Katsuyuki
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06333.x
Subject(s) - thin film transistor , active matrix , materials science , photolithography , substrate (aquarium) , active layer , optoelectronics , transistor , oxide , layer (electronics) , printed electronics , oxide thin film transistor , flexible display , spin coating , thin film , nanotechnology , electrical engineering , inkwell , composite material , voltage , engineering , oceanography , geology , metallurgy
We have demonstrated all‐printed oxide TFT arrays for 100 ppi RGB active matrix fabricated by inkjet printing and spin coating without photolithography and mask process. The average mobility of TFTs was 7.49 ± 1.67 cm 2 /Vs on a thermally oxidized SiO 2 /Si substrate. Moreover, in the case of using of a printed oxide high‐k gate insulator and an n‐type doped active layer on a glass substrate, the average mobility of all‐printed oxide TFTs was 2.54 ± 0.32 cm 2 /Vs.