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52.4: Distinguished Paper : Electrical Properties of Amorphous InGaZnO Thin‐Film Transistors Prepared by Magnetron Sputtering with Using Kr and Xe Instead of Ar
Author(s) -
Goto Tetsuya,
Sugawa Shigetoshi,
Ohmi Tadahiro
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06316.x
Subject(s) - amorphous solid , sputtering , materials science , thin film transistor , sputter deposition , raman spectroscopy , noble gas , thin film , optoelectronics , deposition (geology) , analytical chemistry (journal) , nanotechnology , chemistry , optics , layer (electronics) , crystallography , paleontology , physics , organic chemistry , chromatography , sediment , biology
Heavier noble gases of Kr and Xe instead of the lighter Ar during the magnetron‐sputtering deposition of amorphous indium—gallium‐zinc oxide films are introduced in fabricating their thin‐film transistors. Higher field effect mobility can be obtained by introducing heavier noble gases, while gate bias stability shows no significant difference between gas species. Raman spectroscopic analysis suggests that the disordered structure in the film is suppressed by introducing heavier noble gases. These results suggest that the introduction of heavy noble gases can reduce damage to film by ion bombardment during the sputtering depositions, resulting in the improvement of field effect mobility.