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52.2: Invited Paper : Advanced Sputtering Technologies and Targets for Oxide Semiconductor TFT
Author(s) -
Matsudai Masasuke,
Sato Shigemitsu,
Saito Kazuya
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06314.x
Subject(s) - thin film transistor , active matrix , sputtering , materials science , optoelectronics , diode , semiconductor , silicon , oxide thin film transistor , oled , liquid crystal display , deposition (geology) , amorphous silicon , engineering physics , nanotechnology , engineering , thin film , crystalline silicon , paleontology , layer (electronics) , sediment , biology
Recently, oxide semiconductors have been coming under the spotlights as a replacement of the amorphous silicon (a‐Si) and it is going to be taken into mass production of Active Matrix‐Liquid Crystal Displays (AM‐LCD). However, innovation or further optimization has still been required in film deposition techniques and also in the arrangement of sputtering targets for high definition Active Matrix‐Organic Light Emitting Diodes (AM‐OLED). In this report, ULVAC addresses our analysis and approaches for those issues.