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70.2L: Late‐News Paper : 14.7” Active Matrix PHOLED Displays on Temporary Bonded PEN Substrates with Low Temperature IGZO TFTs
Author(s) -
O'Brien Barry,
Lee Yong Kyun,
Marrs Michael,
Smith Joseph,
Strnad Mark,
Forsythe Eric,
Morton David
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06243.x
Subject(s) - thin film transistor , backplane , materials science , polyethylene naphthalate , optoelectronics , active matrix , substrate (aquarium) , fabrication , oled , phosphorescent organic light emitting diode , diode , transistor , nanotechnology , electrical engineering , computer science , computer hardware , oceanography , medicine , alternative medicine , engineering , layer (electronics) , pathology , voltage , geology
A flexible, 14.7 inch diagonal organic light emitting diode display has been successfully demonstrated. Device fabrication of the thin film transistor backplane occurred below 200 °C on a polyethylene naphthalate substrate using indium gallium zinc oxide with a saturation mobility of 13.5 cm 2 /V‐s as the active semiconductor.