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19.1: Efficiency Enhancement of Indium Phosphide (InP) Based Quantum Dot Light‐Emitting Diodes by Shell Thickness Tuning
Author(s) -
Kim Yohan,
Ippen Christian,
Greco Tonino,
Wedel Armin,
Park Myeongjin,
Lee Changhee,
Han Chul Jong,
Kim Jiwan
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06180.x
Subject(s) - indium phosphide , quantum dot , light emitting diode , optoelectronics , materials science , diode , indium , shell (structure) , gallium arsenide , composite material
We investigated the optoelectronic characteristics of QD‐LEDs by tuning ZnS shell thickness of InP/ZnSe/ZnS multishell QDs. Current efficiency of our QD‐LEDs fabricated using thicker ZnS shell of QDs was enhanced up to 4.65 cd/A. It is one of the promising results reported so far for Cd‐free QD‐LEDs.