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16.4: Photostability Improvement of a‐InGaZnO TFTs by Introducing a Transparent UV Shielding Layer
Author(s) -
Tsai MinYen,
Tsai YunChu,
Teng LiFeng,
Liu PoTsun,
Shieh HanPing D.
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06172.x
Subject(s) - passivation , materials science , layer (electronics) , thin film transistor , optoelectronics , doping , stress (linguistics) , photosensitivity , composite material , linguistics , philosophy
The photosensitivity and stability of a‐IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo‐doped ZnO (MZO). Under a negative bias illumination stress ( NBIS ) with photoenergy (∼3.4eV), the Δ V th of MZO‐passivated TFTs was 0.39 V after 5400 sec of NBIS, whereas the unpassivated TFTs showed a large Δ V th of −10.56 V. Moreover, the unpassivated TFTs exhibited a slight positive V th shift of 1.69 V after 5400 sec of positive bias stress ( PBS ), while the Δ V th of MZO‐passivated TFTs was only 0.45 V .