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16.3: AC and DC Bias‐Temperature Stability of Coplanar Homojunction a‐InGaZnO Thin‐Film Transistors
Author(s) -
Yu Eric KaiHsiang,
Abe Katsumi,
Kumomi Hideya,
Kanicki Jerzy
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06171.x
Subject(s) - homojunction , duty cycle , materials science , thin film transistor , optoelectronics , polarity (international relations) , stress (linguistics) , transistor , voltage , electrical engineering , doping , chemistry , composite material , biochemistry , linguistics , philosophy , layer (electronics) , cell , engineering
We fabricated coplanar homojunction a‐IGZO TFTs that are highly stable under AC and DC bias‐temperature‐stress. For TFTs of the size W/L = 60μm/10μm, the stress‐induced threshold voltage shifts are all within −0.35 V. A comprehensive investigation of AC BTS stress polarity, pulse width, and duty cycle dependence is presented We find that higher frequency of bipolar AC pulses increases the device instability, while lower duty cycle values have the opposite effect.