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16.1: Negative‐Bias Photodegradation Mechanism in InGaZnO TFT
Author(s) -
Tsubuku Masashi,
Watanabe Ryosuke,
Ishihara Noritaka,
Kishida Hideyuki,
Takahashi Masahiro,
Yamazaki Shunpei,
Kanzaki Yohsuke,
Matsukizono Hiroshi,
Mori Shigeyasu,
Matsuo Takuya
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06169.x
Subject(s) - photodegradation , degradation (telecommunications) , thin film transistor , mechanism (biology) , materials science , optoelectronics , photochemistry , chemistry , nanotechnology , computer science , physics , catalysis , telecommunications , photocatalysis , organic chemistry , layer (electronics) , quantum mechanics
Recent studies have shown that IGZO are variously influenced by photoirradiation. In this study, by using measurement results of optical properties and calculation results, a relationship of defect levels in the IGZO films and the SiO 2 films to negative‐bias photodegradation was examined, and the mechanism of the degradation was revealed.