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10.2: Invited Paper : Development of Oxide TFT's Structures
Author(s) -
Bae Jong UK,
Kim Dae Hwan,
Kim Kitae,
Jung Kiyoung,
Shin Woosup,
Kang Inbyeong,
Yeo SangDeog
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06148.x
Subject(s) - thin film transistor , materials science , optoelectronics , oxide , capacitance , layer (electronics) , etching (microfabrication) , channel (broadcasting) , oxide thin film transistor , nanotechnology , electrical engineering , chemistry , metallurgy , engineering , electrode
Advanced structures of oxide TFT have been studied for various display applications. Oxide TFT with etch‐stopped layer has shown excellent uniformity and stability for display products. For mass production with low cost, however, back channel etched structure with/without titanium etch‐stopped one has been studied and demonstrated promising electrical properties comparable to etch stop structure. Furthermore, we have developed self‐aligned coplanar structure as one of ways to minimize parasitic capacitance and found excellent electrical properties and bias stability at 6 μm of channel length, which is demonstrated with 13.3 inch AMOLED.