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8.2: Semi‐transparent Inverted Quantum‐dot Light Emitting Diodes
Author(s) -
Kim HyoMin,
Youn JunHo,
Seo GiJun,
Jang Jin
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06142.x
Subject(s) - quantum dot , optoelectronics , transmittance , materials science , light emitting diode , diode , electrode , layer (electronics) , visible spectrum , optics , physics , nanotechnology , quantum mechanics
A semi‐transparent inverted quantum dot light emitting diode (QLED) is demonstrated using tri‐layer QDs, exhibiting bottom emission of 6,485 cd/m 2 and top emission of 1,911 cd/m 2 . And its transmittance in the visible region is ∼30 % with 18 nm Ag top semi‐transparent electrode.