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4.4L: Late‐News Paper : Modeling Current‐Voltage Behaviour in Oxide TFTs Combining Trap‐limited Conduction with Percolation
Author(s) -
Lee Sungsik,
Yang Yifan,
Nathan Arokia
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06129.x
Subject(s) - percolation (cognitive psychology) , trap (plumbing) , thermal conduction , materials science , exponent , thin film transistor , oxide , transient (computer programming) , transistor , current (fluid) , voltage , condensed matter physics , power law , optoelectronics , electrical engineering , physics , nanotechnology , computer science , thermodynamics , mathematics , engineering , philosophy , linguistics , composite material , biology , operating system , layer (electronics) , metallurgy , statistics , neuroscience , meteorology
Current‐voltage behaviour of oxide TFTs is modeled based on trap‐limited conduction and percolation theories. The mobility has a power‐law dependence, in which percolation controls the exponent while trap states determine constant term in the power law. The proposed model, which is fully physically‐based, provides a good agreement with measured transistor characteristics as well as transient operations of fabricated pixel test circuits for oxide‐based OLED displays.