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4.3: Invited Paper : High Mobility Oxide TFT for Large Area High Resolution AMOLED
Author(s) -
Park SangHee Ko,
Kim Jong Woo,
Ryu Minki,
Eom In Yong,
Pi JaeEun,
Kwon OhSang,
Park Eunsook,
Oh Himchan,
Hwang ChiSun,
Lim Sun Kwon
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2013.tb06128.x
Subject(s) - passivation , thin film transistor , amoled , materials science , optoelectronics , chemical mechanical planarization , oxide thin film transistor , layer (electronics) , transistor , etching (microfabrication) , doping , nanotechnology , electrical engineering , voltage , active matrix , engineering
The adoption of bi‐layered etch stop layer (BiESL) for oxide thin film transistor with high carrier mobility was proposed for the application to the large area high resolution AMOLED. A novel bi‐layered etch stop structure composed of Al 2 O 3 /SiO 2 , in which thin and dense Al 2 O 3 film prepared by atomic layer deposition was deposited on the PECVD SiO 2 layer. High mobility of In‐Ga‐Zn‐O TFT with the proposed BiESL showed no significant change in turn‐on voltage, even without passivation film. The field‐effect saturation mobility and sub‐threshold swing were measured as 29 cm 2 /V.s and 0.21 V/dec, respectively. Hydrogen doping during the PECVD SiN x passivation process can be effectively prevented by the introduction of Al 2 O 3 . Furthermore organic planarization film can be coated directly on top of the TFT array without causing any significant degradation of TFT performance.