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P‐76: Resistive Switching Memory Device Based on Amorphous Al‐Zn‐Sn‐O Film for Flexible Electronics Application
Author(s) -
Fan YangShun,
Liu PoTsun,
Hsu ChingHui,
Lai HsuanYing
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb06051.x
Subject(s) - resistive random access memory , thin film transistor , materials science , optoelectronics , tin , transistor , non volatile memory , resistive touchscreen , amorphous solid , electronics , electrical engineering , nanotechnology , layer (electronics) , voltage , engineering , metallurgy , chemistry , organic chemistry
We have fabricated flexible resistive switching memory (RRAM) using Al‐doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co‐operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.