Premium
P‐139L: Late‐News Poster : AC Gate‐Drain‐Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications
Author(s) -
Yang ChaoYu,
Huang ShihChe,
Chiu HaoLin,
Hsieh Ting,
Yeh BoLiang,
Lin Ching Shun,
Liao TaWen,
Tseng HsienKai,
Lin Chun Nan,
Tsai Wen Ching
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05991.x
Subject(s) - thin film transistor , materials science , optoelectronics , reliability (semiconductor) , contact resistance , stress (linguistics) , amorphous solid , transistor , oxide , electrical engineering , composite material , metallurgy , engineering , layer (electronics) , chemistry , crystallography , physics , voltage , power (physics) , linguistics , philosophy , quantum mechanics
This paper investigates the reliability behavior of IGZO TFT with different widths under AC gate and drain stress. Device of larger width suffers from worse current degradation. By comparing the contact resistance after stress such behavior can be attributed to the damaged contact region by large current during stress.