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P‐21: High Performance Solution Processed IZTO TFT at the Maximum Process Temperature of 230°C
Author(s) -
Avis Christophe,
Kim Youn Goo,
Jang Jin
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05989.x
Subject(s) - thin film transistor , materials science , threshold voltage , oxide thin film transistor , optoelectronics , field effect , aluminum oxide , subthreshold conduction , oxide , zinc , transistor , aluminium , voltage , layer (electronics) , electrical engineering , metallurgy , composite material , engineering
We report a high performance solution processed oxide thin film transistor (TFT) produced at the maximum temperature of 230°C. Chloride derivate precursors were used for making Indium Zinc Tin Oxide (IZTO) as channel layer and Aluminum Oxide (AlOx) as gate insulator. The IZTO TFT exhibits field‐effect mobility of 6.8 cm 2 /Vs, threshold voltage of 0.74V and subthreshold swing of 103mV/dec. The TFT shows stable performance under negative bias and illumination stress (NBIS).