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P‐18: Low‐Power and Small‐Sized Scan Driver Using Amorphous Oxide TFTs
Author(s) -
Hong SungJin,
Kang JinSeong,
Lee ChangHee,
Kwon OhKyong
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05986.x
Subject(s) - thin film transistor , transistor , power (physics) , power consumption , materials science , electrical engineering , voltage , scan line , computer science , engineering , physics , nanotechnology , artificial intelligence , pixel , layer (electronics) , quantum mechanics , grayscale
This paper presents a low‐power and small‐sized scan driver using amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs). Power consumption of the proposed scan driver is reduced by eliminating unnecessary charging current of the scan line and reducing the voltage swing of clock signals. In the proposed scan driver, area of the output stage, which requires large‐sized driving TFTs, is also reduced by merging TFTs for charging and discharging the scan line into one TFT and using non‐overlapping clock signals. Compared to the previous scan driver, power consumption and area of the output stage of the proposed scan driver is reduced by 21% and 40%, respectively. The proposed scan driver has power consumption of 27.4 μW per stage at the operating frequency of 46 kHz and the area per stage is 1153 × 192 μm 2 .