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P‐14: a‐IGZO TFT Based Pixel Circuits for AM‐OLED Displays
Author(s) -
Jung Hyunseung,
Kim Yongchan,
Kim Youngseok,
Chen Charlene,
Kanicki Jerzy,
Lee Hojin
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05983.x
Subject(s) - thin film transistor , oled , oxide thin film transistor , amoled , materials science , optoelectronics , active matrix , threshold voltage , amorphous silicon , electronic circuit , voltage , pixel , transistor , amorphous solid , electrical engineering , silicon , computer science , crystalline silicon , engineering , artificial intelligence , nanotechnology , chemistry , organic chemistry , layer (electronics)
In this paper, we analyze application of amorphous Indium‐Gallium‐Zinc‐Oxide thin film transistors (a‐InGaZnO TFTs) to voltage‐driven pixel electrode circuit that could be used for 4.3‐in. wide video graphics array (WVGA) full color active‐matrix organic light‐emitting displays (AM‐OLEDs). Simulation results, based on a‐InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compared to the same circuit using hydrogenated amorphous silicon (a‐Si:H) TFTs. Moreover, the a‐InGaZnO TFT pixel circuit can compensate for the threshold voltage variation (ΔV TH ) of driving TFT within acceptable operating error range.