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P‐9: Bridged Grain MIC Poly‐Si Thin‐Film Transistors with Sputtered AlO x as Gate Dielectrics
Author(s) -
Zhou Wei,
Meng Zhiguo,
Zhao Shuyun,
Zhang Meng,
Chen Rongsheng,
Wong Man,
Kwok Hoi Sing
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05978.x
Subject(s) - thin film transistor , materials science , optoelectronics , dielectric , threshold voltage , gate dielectric , transistor , flat panel display , high κ dielectric , subthreshold conduction , voltage , electrical engineering , nanotechnology , engineering , layer (electronics)
Bridged grain (BG) technology was applied to fabricate MIC poly‐Si TFTs with AlOx gate dielectrics. The threshold voltage (Vth) and subthreshold swing (SS) of MIC TFTs are greatly improved. Meanwhile, the drawback of using high‐k dielectrics, such as large off‐state leakage current and early kink effect was effectively suppressed by using BG structure. Combination of BG and high‐k gate insulators makes the resulting device a promising candidate for system on panel applications.