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70.2: Impact of Gate Oxide Thickness and Channel Length on Junction‐Less Poly‐Si TFTs
Author(s) -
Lin ChengI,
Lin HorngChih,
Huang TiaoYuan
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05945.x
Subject(s) - materials science , channel (broadcasting) , oxide , optoelectronics , gate oxide , current (fluid) , thin film transistor , electrical engineering , nanotechnology , transistor , layer (electronics) , metallurgy , engineering , voltage
Poly‐Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short‐channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.