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63.2: Field Emission Display with Homogenized Carbon Nanotube Emitters Grown by Resist‐Assisted Patterning Process
Author(s) -
Park Kyu Chang,
Eom Young Ju,
Lee Su Woong,
Kim Chee Young,
Lee ChoonRae
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05921.x
Subject(s) - field electron emission , materials science , field emission display , carbon nanotube , resist , optoelectronics , etching (microfabrication) , nanotechnology , silicon , electron , layer (electronics) , physics , quantum mechanics
Field emission display (FED) was fabricated with resist‐assisted patterning (RAP) process grown carbon nanotube (CNT) emitters. Electron emission current uniformity was strongly improved by homogenizing process with silicon‐on glass (SOG). The length of CNT emitters was homogenized with SOG coating and selective CNT etching process. Uniform CNT emitters were fabricated with the post‐growth homogenizing process. We fabricated 3 inch FED display with 32 μm sub‐pixel size with the CNT emitters. Electron emission current shows possible operation of the FED with 5 V/μm gate field. The electron emission characteristics and display performance were discussed.