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56.4: Dual‐Gate IGZO TFT for Threshold‐ Voltage Compensation in AMOLED Pixel Circuit
Author(s) -
Chou LuSheng,
Chiu HaoLin,
Chen BoCheng,
Tai YaHsiang
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05897.x
Subject(s) - amoled , thin film transistor , materials science , optoelectronics , threshold voltage , oled , overdrive voltage , active matrix , transistor , compensation (psychology) , electrode , electrical engineering , voltage , engineering , nanotechnology , physics , psychology , layer (electronics) , quantum mechanics , psychoanalysis
In addition to the gate electrode at the bottom, a dual‐gate InGaZnO 4 (a‐IGZO) thin film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage of the TFT using the bottom‐gate in its normal operation can be controlled by the top‐gate. Based on this phenomenon, a new concept of using the top‐gate to compensate threshold voltage variation is proposed. This new technique is demonstrated in two pixel circuits of active‐matrix organic light‐emitting diode and verified by the measurement results.