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56.2: Deposition of a‐InGaZnO x by Rotation Magnet Sputtering
Author(s) -
Hiroe Akihiko,
Goto Tetsuya,
Sugawa Shigetoshi,
Ohmi Tadahiro
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05895.x
Subject(s) - sputtering , sputter deposition , magnet , figure of merit , materials science , cavity magnetron , deposition (geology) , rotation (mathematics) , optoelectronics , thin film , electrical engineering , computer science , nanotechnology , engineering , geology , artificial intelligence , paleontology , sediment
We have developed a new magnetron sputtering equipment called Rotation Magnet Sputtering (RMS), and realized the target utilization rate of more than 60%. We applied this new system to the deposition of a‐InGaZnO x films. Comparison of the spatial distribution of the film characteristics between RMS and conventional magnetron sputtering revealed that film quality near erosion area is better than the rest presumably due to the heating from plasma. It was also revealed that this spatial distribution is smaller for RMS than conventional magnetron sputtering, which can be another merit of RMS.