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25.3: Flexible In‐cell Infrared a‐Si Sensor
Author(s) -
Chiang WenJen,
Kung ChenPeng,
Chen ShengWei,
Chang ChihChia,
Wu ChungWen
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05784.x
Subject(s) - optoelectronics , responsivity , infrared , materials science , photocurrent , photodetector , dot pitch , fabrication , thin film transistor , transistor , silicon , amorphous silicon , infrared detector , dark current , pixel , optics , nanotechnology , crystalline silicon , electrical engineering , physics , medicine , alternative medicine , pathology , layer (electronics) , voltage , engineering
In this work, an in‐cell photosensor was fabricated on a flexible display backplane for infrared sensing utilizations, such as optical touch panel, pen‐writing input function, and so on. The IR responsivity of a hydrogenated amorphous silicon thin film transistor was characterized under near‐infrared illuminations of 850 nm and 940 nm wavelengths. A compact active pixel sensor integrating the photo transistor was embedded into the display cell array. The experimental results demonstrate that a photocurrent to dark current ratio above 10 3 , and an infrared sensitivity of 0.2 V/(s·W·m 2 ) of the in‐cell active pixel sensor were obtained. With the advantages of process compatibility, flexibility and low fabrication cost of scaling‐up, the flexible in‐cell infrared sensor can be a very promising optical detector for all kinds of applications.
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