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25.2: Photo‐Sensor Thin Film Transistor based on Double Metal‐Oxide Layer for In‐cell Remote Touch Screen
Author(s) -
Ahn Seungeon,
Jeon Sanghun,
Song Ihun,
Jeon Yongwoo,
Kim Young,
Kim Changjung,
Lim Junhyung,
Jeong Wooho,
Goh Joonchul,
Yeon Seongjin,
Lee Cheolgon,
Kim Jonghee,
Lee Jehun,
Song Junho,
Nathan Arokia,
Lee Sungsik,
Chung Uin
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05783.x
Subject(s) - thin film transistor , optoelectronics , materials science , transistor , oxide , liquid crystal display , layer (electronics) , oxide thin film transistor , pixel , metal , semiconductor , image sensor , optics , electrical engineering , nanotechnology , engineering , physics , metallurgy , voltage
16 inch LCD in‐cell remote touch screen with photo sensor in which the active structure is comprised of double metal‐oxide semiconductor layers (GIZO/IZO) in its pixels has been developed. Double metal‐oxide thin film transistor (TFT) for both switch and sensor elements shows high photo current as I light /I dark >10 6 , a mobility of >10cm 2 /Vs and high stability under LCD operation condition. In this paper, the possibility of a novel application of an optical touch screen which is entirely based on the metal oxide TFT is proposed.