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22.1: Binary Alignment Pattern Induced by Single Step Exposure of Laser Beam Polarization Interference
Author(s) -
Tan Li,
Ho Jacob Y.,
Kwok HoiSing
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05770.x
Subject(s) - perpendicular , optics , binary number , polarization (electrochemistry) , laser beams , interference (communication) , laser , materials science , beam (structure) , physics , chemistry , telecommunications , geometry , computer science , channel (broadcasting) , mathematics , arithmetic
A new method of making binary alignment pattern through a single step exposure without using mask is proposed. This binary pattern is induced by polarization interference of laser beams at alignment surface. The line width is controlled by crossing angle between two input beams, which could be very small. Using azo‐dye as alignment material, which tends to align their long axis perpendicular to the activate light polarization direction, we obtain a binary pattern of 3 μm in pitch with laser beam crossing half angle at 3.48°.