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20.4: An 8‐in. Oxide‐TFT‐Driven Flexible AMOLED Display with Solution‐Processed Insulators
Author(s) -
Nakajima Yoshiki,
Nakata Mitsuru,
Takei Tatsuya,
Sato Hiroto,
Tsuji Hiroshi,
Fujisaki Yoshihide,
Shimizu Takahisa,
Motomura Genichi,
Fukagawa Hirohiko,
Yamamoto Toshihiro,
Fujikake Hideo
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05766.x
Subject(s) - amoled , thin film transistor , materials science , backplane , flexible display , optoelectronics , passivation , oled , oxide thin film transistor , layer (electronics) , polymer , nanotechnology , composite material , computer science , active matrix , computer hardware
An 8‐inch VGA flexible AMOLED display driven by oxide TFTs was successfully fabricated at a process temperature of 130°C. InGaZnO 4 (IGZO) was used as the semiconductor layer. Solution‐processed organic materials were employed as the gate insulator of the TFTs and the passivation layer on the backplane. Phosphorescent polymers as OLEDs were formed by an ink‐jet printing technique. Some properties of the IGZO‐TFTs were evaluated. The fabricated flexible display exhibited clear color moving images.