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20.3: The Organic Passivation Layer for Flexible Thin Film Transistors
Author(s) -
Chan ChiShun,
Hung ShihHsing,
Hwu KehLong,
Hu ChihJen,
Huang WeiMing
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05765.x
Subject(s) - passivation , materials science , flexibility (engineering) , optoelectronics , transistor , layer (electronics) , thin film transistor , nanotechnology , electrical engineering , engineering , mathematics , statistics , voltage
Using flexible organic passivation has lots of advantages compared with traditional in‐organic passivation such as simpler process, lower leakage current (Ioff = 10 −14 A), lower temperature process (<200°C) and better flexibility. Photo‐sensitive type organic passivation was succeeded in replacing in‐organic passivation (SiNx) in 6″ SVGA active‐matrix EPD.