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9.4L: Late‐News Paper : Microscopic Mechanism of the Negative Bias and Illumination Stress Instability of Amorphous Oxide TFTs
Author(s) -
Kim YongSung,
Nahm HoHyun,
Kim Dae Hwan
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05719.x
Subject(s) - instability , oxide , amorphous solid , materials science , excited state , stress (linguistics) , chemical physics , condensed matter physics , chemistry , atomic physics , physics , crystallography , metallurgy , mechanics , linguistics , philosophy
The microscopic origin of the negative bias and illumination stress (NBIS) instability of amorphous oxide semiconductors is revealed by first‐principles calculations. We find that the excited holes during the stresses generate O 2 peroxide defects in the oxide channel with increasing the Fermi level. The peroxide defects exhibit meta‐stability.