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9.3: A 32‐inch Active‐Matrix Organic Light‐Emitting Diode Television Panel Driving by Amorphous Indium‐Gallium‐Zinc Oxide Thin‐Film Transistors
Author(s) -
Shih TsungHsiang,
Tsai TsungTing,
Chen KuanChi,
Lee YungChih,
Fang ShouWei,
Lee JenYu,
Hsieh WeiJung,
Tseng SzuHeng,
Chiang YuanMing,
Wu WenHao,
Wang SanChi,
Lu HsuehHsing,
Chang LeeHsun,
Tsai Lun,
Chen ChiaYu,
Lin YuHsin
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05718.x
Subject(s) - active matrix , thin film transistor , materials science , optoelectronics , diode , amorphous solid , indium , gallium , oled , transistor , light emitting diode , amoled , flat panel display , zinc , thin film , optics , electrical engineering , nanotechnology , chemistry , engineering , metallurgy , physics , organic chemistry , layer (electronics) , voltage
We demonstrated a defect free 32‐inch large scaled amorphous indium‐gallium‐zinc‐oxide based active‐matrix organic light‐emitting diode television panel. The panel achieves good image quality, such as high contrast ratio, a wide viewing angle, and fast response time, and the module thickness is only 3 mm. The thin film transistor shows excellent characteristic and the compensation pixel circuit is used. The side by side organic light‐emitting diode device is realized by fine metal mask.