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7.2: Fast‐Addressing Waveform with Negative‐Going Ramp for High‐Xe PDP with High‐Gamma Cathode Materials
Author(s) -
Whang KiWoong,
Cheong HeeWoon,
Kwon Ohyung
Publication year - 2012
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/j.2168-0159.2012.tb05709.x
Subject(s) - cathode , waveform , reset (finance) , materials science , xenon , layer (electronics) , optoelectronics , voltage , electrical engineering , analytical chemistry (journal) , atomic physics , composite material , chemistry , physics , engineering , financial economics , economics , chromatography
In this paper, the address discharge characteristics of high‐Xe PDPs with high‐gamma cathode materials were investigated. It will be shown that the address discharge characteristics such as the dynamic voltage margin and the address discharge time lag of high‐Xe PDP with MgO‐SrO double cathode layer and one with MgCaO single cathode layer can be improved by inducing stable, continuous weak discharges during the reset period with a newly designed waveform. The deposition of pure MgO powder on high gamma cathode material has also proved to be effective in reducing the address discharge time lag of high‐Xe PDP.