Open AccessBack Cover Image
Author(s) -
Di Jiayu,
Du Jianhui,
Lin Zhenhua,
Liu Shengzhong Frank,
Ouyang Jianyong,
Chang Jingjing
Publication year - 2021
Publication title -
infomat
Language(s) - English
Resource type - Journals
ISSN - 2567-3165
DOI - 10.1002/inf2.12179
Subject(s) - resistive touchscreen , cover (algebra) , computer science , von neumann architecture , perovskite (structure) , key (lock) , image (mathematics) , resistive random access memory , limit (mathematics) , engineering physics , data science , electrical engineering , computer vision , voltage , engineering , mechanical engineering , computer security , mathematics , operating system , mathematical analysis , chemical engineering
The advent of IOT has led to the emergence of massive data storage and processing problems. Resistive random access memories (RRAMs) are expected to break through Moore's law and solve the Von Neumann limit. Significant progress has been made in the field of RRAMs using lead halide perovskite as storage medium. The authors of this manuscript summarized the working principle and current research progress of perovskite‐based resistive memory, and discussed key factors hindering the development and future development prospects. (DOI: 10.1002/inf2.12162 ).