Open AccessBack Cover Image
Author(s) -
Ma Huifang,
Huang Kejing,
Wu Ruixia,
Zhang Zhengwei,
Li Jia,
Zhao Bei,
Dai Chen,
Huang Ziwei,
Zhang Hongmei,
Yang Xiangdong,
Li Bo,
Liu Yuan,
Duan Xiangfeng,
Duan Xidong
Publication year - 2021
Publication title -
infomat
Language(s) - English
Resource type - Journals
ISSN - 2567-3165
DOI - 10.1002/inf2.12173
Subject(s) - ohmic contact , heterojunction , optoelectronics , materials science , semiconductor , transistor , cover (algebra) , field effect transistor , nanotechnology , electrical engineering , layer (electronics) , voltage , engineering , mechanical engineering
The synthesis of 2D WSe2 nanosheets, CoSe‐WSe2 lateral heterostructures. The field‐effect transistors (FETs) of CoSe‐WSe2 lateral heterostructures show satisfactory Ohmic contacts and considerably better FET performance over those with deposited Cr/Au contacts, suggesting the in‐plane metal‐semiconductor junctions may function as improved contacts for the atomically thin transistors. (DOI: 10.1002/inf2.12157 )