Scalable manufacture of vertical p‐GaN / n‐SnO 2 heterostructure for self‐powered ultraviolet photodetector, solar cell and dual‐color light emitting diode

Vertical SnO 2 based p‐n junctions are pivotal since they built the core components in photoelectronic systems. Nevertheless, preparation of high‐quality p ‐SnO 2 with controllable hole mobility and concentration is still a great challenge owing to the self‐compensating effect and lattice distortion caused by the radius discrepancy between host and doped atoms. Herein, p type GaN:Mg grown by metal organic chemical vapor deposition is employed as hole transportation layer to construct p‐n heterojunction with intrinsic n ‐SnO 2 prepared by atomic layer deposition. Both material preparation techniques are compatible with current industrial mass production processes. The p ‐GaN/ n ‐SnO 2 heterojunction can be developed as solar cell, dual‐color light emitting diode and self‐powered, high speed ultraviolet (UV) photodetector with external quantum efficiency of 74% at 0 V bias voltage. In addition, direct recombination of donor bound excitons (D 0 X) and UV emission red shifts caused by quantum confinement Stack effect are observed in SnO 2 . Since our device fabrication technique is a standard craft in photoelectronics, the study of p ‐GaN/ n ‐SnO 2 heterojunction suggests a simple and effective strategy for large scale device integration in next generation high performance photoelectronic devices.