Open AccessTwo‐dimensional heterostructure promoted infrared photodetection devices
Author(s) -
Rao Gaofeng,
Wang Xuepeng,
Wang Yang,
Wangyang Peihua,
Yan Chaoyi,
Chu Junwei,
Xue Lanxin,
Gong Chuanhui,
Huang Jianwen,
Xiong Jie,
Li Yanrong
Publication year - 2019
Publication title -
infomat
Language(s) - English
Resource type - Journals
ISSN - 2567-3165
DOI - 10.1002/inf2.12018
Subject(s) - photodetector , photodetection , heterojunction , semiconductor , infrared , optoelectronics , broadband , field (mathematics) , materials science , computer science , engineering physics , physics , optics , mathematics , pure mathematics
It is a rapidly developed subject in expanding the fundamental properties and application of two‐dimensional (2D) materials. The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures (2DHs) based broadband photodetectors in the far‐infrared (IR) and middle‐IR regions with high response and high detectivity. This review focuses on the strategy and motivation of designing 2DHs based high‐performance IR photodetectors, which provides a wide view of this field and new expectation for advanced photodetectors. First, the photocarriers' generation mechanism and frequently employed device structures are presented. Then, the 2DHs are divided into semimetal/semiconductor 2DHs, semiconductor/semiconductor 2DHs, and multidimensional semi‐2DHs; the advantages, motivation, mechanism, recent progress, and outlook are discussed. Finally, the challenges for next‐generation photodetectors are described for this rapidly developing field.