Open AccessLarge‐area high quality PtSe 2 thin film with versatile polarity
Author(s) -
Jiang Wei,
Wang Xudong,
Chen Yan,
Wu Guangjian,
Ba Kun,
Xuan Ningning,
Sun Yangye,
Gong Peng,
Bao Jingxian,
Shen Hong,
Lin Tie,
Meng Xiangjian,
Wang Jianlu,
Sun Zhengzong
Publication year - 2019
Publication title -
infomat
Language(s) - English
Resource type - Journals
ISSN - 2567-3165
DOI - 10.1002/inf2.12013
Subject(s) - ambipolar diffusion , materials science , polarity (international relations) , optoelectronics , nanotechnology , electron mobility , thin film , field effect transistor , transistor , layer (electronics) , electrical engineering , chemistry , voltage , electron , physics , biochemistry , engineering , quantum mechanics , cell
Abstract Two‐dimensional (2D) materials have attracted increasing attention for their outstanding structural and electrical properties. However, for mass‐production of field effect transistors (FETs) and potential applications in integrated circuits, large‐area and uniform 2D thin films with high mobility, large on‐off ratio, and desired polarity are needed to synthesize firstly. Here, a transfer‐free growth method for platinum diselenide (PtSe 2 ) films has been developed. The PtSe 2 films have been synthesized with various thicknesses in centimeter‐sized scale. Typical FET made from a few layer PtSe 2 show p‐type unipolar, with a high field‐effect hole mobility of 6.2 cm 2 V −1 s −1 and an on‐off ratio of 5 × 10 3 . The versatile semimetal‐unipolar‐ambipolar transition in synthesized PtSe 2 films is also firstly observed as the thickness thinning. This work realizes the large‐scale preparation of PtSe 2 with prominent electrical properties and provides a new strategy for polarity's modulation.