Open AccessCharacterization of atomic defects on the photoluminescence in two‐dimensional materials using transmission electron microscope
Author(s) -
Zhang Jiayan,
Yu Ye,
Wang Peng,
Luo Chen,
Wu Xing,
Sun Ziqi,
Wang Jianlu,
Hu Wei Da,
Shen Guozhen
Publication year - 2019
Publication title -
infomat
Language(s) - English
Resource type - Journals
ISSN - 2567-3165
DOI - 10.1002/inf2.12002
Subject(s) - photoluminescence , materials science , characterization (materials science) , transmission electron microscopy , atomic units , dopant , nanotechnology , luminescence , optoelectronics , doping , physics , quantum mechanics
Two‐dimensional material (2D) that possesses atomic thin geometry and remarkable properties is a star material for the fundamental researches and advanced applications. Defects in 2D materials are critical and fundamental to understand the chemical, physical, and optical properties. Photoluminescence arises in 2D materials owing to various physical phenomena including activator/dopant‐induced luminescence and defect‐related emissions, and so forth. With the advanced transmission electron microscopy (TEM) technologies, such as aberration correction and low voltage technologies, the morphology, chemical compositions and electronic structures of defects in 2D material could be directly characterized at the atomic scale. In this review, we introduce the applications of state‐of‐the‐art TEM technologies on the studies of the role of atomic defects in the photoluminescence characteristics in 2D material. The challenges in spatial and time resolution are also discussed. It is proved that TEM is a powerful tool to pinpoint the relationship between the defects and the photoluminescence characteristics.