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A Promising Modified SILAR Sequence for the Synthesis of Photoelectrochemically Active Cu 2 ZnSnS 4 (CZTS) Thin Films
Author(s) -
Suryawanshi M. P.,
Shin S. W.,
Agawane G. L.,
Gurav K. V.,
Ghorpade U. V.,
Hong C. W.,
Gaikwad M. A.,
Patil P. S.,
Kim Jin Hyeok,
Moholkar A. V.
Publication year - 2015
Publication title -
israel journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 54
eISSN - 1869-5868
pISSN - 0021-2148
DOI - 10.1002/ijch.201400203
Subject(s) - czts , thin film , raman spectroscopy , band gap , chemistry , open circuit voltage , chemical engineering , microstructure , energy conversion efficiency , analytical chemistry (journal) , nanotechnology , optoelectronics , materials science , optics , crystallography , voltage , organic chemistry , physics , engineering , quantum mechanics
A promising modified SILAR sequence approach has been employed for the synthesis of photoelectrochemically active Cu 2 ZnSnS 4 (CZTS) thin films. To study the influence of sulfurization temperatures on the CZTS thin films, the CZTS precursor thin films were annealed at temperatures of 520, 540, 560, and 580 °C for 1 h in an H 2 S (5 %)+Ar (95 %) atmosphere. These films were characterized for their structural, morphological, and optical properties using X‐ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, and UV‐vis spectrophotometer techniques. The film sulfurized at an optimized temperature of 580 °C shows the formation of a prominent CZTS phase with a dense microstructure and optical band gap energy of 1.38 eV. The photoelectrochemical (PEC) device fabricated using optimized CZTS thin films sulfurized at 580 °C exhibits an open circuit voltage ( V oc ) of 0.38 V and a short circuit current density ( J sc ) of 6.49 mA cm −2 , with a power conversion efficiency (η) of 0.96 %.