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The Mechanism of Operation of Lateral and Vertical Organic Field Effect Transistors
Author(s) -
BenSasson Ariel J.,
Greenman Michael,
Roichman Yohai,
Tessler Nir
Publication year - 2014
Publication title -
israel journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 54
eISSN - 1869-5868
pISSN - 0021-2148
DOI - 10.1002/ijch.201400040
Subject(s) - transistor , chemistry , field effect transistor , context (archaeology) , field (mathematics) , mechanism (biology) , semiconductor , engineering physics , optoelectronics , electrical engineering , physics , quantum mechanics , engineering , geology , voltage , pure mathematics , paleontology , mathematics
In this contribution, we describe the working principles of organic field effect transistors. To place it in context, we start with a brief description of some aspects of semiconductor field effect transistors. We then describe the standard structure and properties of laterally aligned field effect transistors and at the end, touch upon some properties of the newly developed vertically stacked field effect transistors.