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Superconformal Electrodeposition for 3‐Dimensional Interconnects
Author(s) -
Moffat Thomas P.,
Josell Daniel
Publication year - 2010
Publication title -
israel journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 54
eISSN - 1869-5868
pISSN - 0021-2148
DOI - 10.1002/ijch.201000029
Subject(s) - microelectronics , chemistry , nanotechnology , fabrication , electromigration , transistor , electrochemistry , engineering physics , voltage , electrical engineering , materials science , physics , electrode , engineering , medicine , alternative medicine , pathology
Electrodeposition is a key fabrication process used in the state‐of‐the‐art multilevel Cu metallization of microelectronic interconnects, from transistor to circuit board length scale. Recent electrochemical surface science and feature filling studies have provided mechanistic insight into the role of additives in superconformal film growth responsible for void‐free filling of recessed surface features. These studies have shown that a physical model based on mass conservation of accelerating surfactant species during area change very effectively describes feature filling of Cu, Ag, and Au from different electrolytes. This paper presents a selective and cursory review of some relevant developments underway in our laboratory.