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Devices at High Temperatures—Status and Prospects
Author(s) -
Kohn Erhard,
Ebert Wolfgang,
Vescan Andrei
Publication year - 1998
Publication title -
israel journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 54
eISSN - 1869-5868
pISSN - 0021-2148
DOI - 10.1002/ijch.199800011
Subject(s) - diamond , chemistry , schottky diode , limiting , diode , optoelectronics , transistor , semiconductor , engineering physics , field effect transistor , electrical engineering , materials science , mechanical engineering , voltage , physics , organic chemistry , engineering
The temperature‐handling capability of diamond diode and field effect transistor structures is discussed and compared with recent results on GaN. The main parameters limiting the high‐temperature performance are identified and evaluated. A diamond high‐temperature technology is presented which has allowed 1000°C operation of a diamond Schottky diode, the highest temperature of operation of any semiconductor diode yet.