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Reaction of Silane with Atomic Oxygen at High Temperatures
Author(s) -
Iida Daisuke,
Koshi Mitsuo,
Matsui Hiroyuki
Publication year - 1996
Publication title -
israel journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 54
eISSN - 1869-5868
pISSN - 0021-2148
DOI - 10.1002/ijch.199600040
Subject(s) - chemistry , silane , atomic oxygen , oxygen , photochemistry , organic chemistry
The reaction of silane with atomic oxygen ( 3 P) was investigated by the shock‐tube–laser‐photolysis method over the temperature range of 900–1170 K. Oxygen atoms were produced by the ArF laser photolysis of SO 2 behind reflected shock waves and monitored with atomic resonance absorption spectroscopy. The rate constant for the SiH 4 + O reaction was evaluated by taking the possible contribution of the consecutive reaction into consideration. The Arrhenius temperature coefficient was determined to be E a = 26.6 kJ mol −1 , which is much higher than the experimental activation energies obtained at lower temperatures. Rate constants calculated by a transition state theory with the reaction barrier height of E 0 = 10.2 kJ mol −1 agreed well with both the present and the previous experimental results for a wide temperature range.