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Thermally‐Induced Changes in Bonding Properties of C 60 on Si(100)‐2×1 Surfaces
Author(s) -
Yao Xiaowei,
Chen Dong,
Ruskell Todd G.,
Workman Richard K.,
Sarid Dror
Publication year - 1996
Publication title -
israel journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 54
eISSN - 1869-5868
pISSN - 0021-2148
DOI - 10.1002/ijch.199600007
Subject(s) - physisorption , chemistry , molecule , annealing (glass) , dimer , scanning tunneling microscope , adsorption , covalent bond , crystallography , dipole , chemical physics , nanotechnology , organic chemistry , materials science , composite material
The co‐adsorption of pre‐ and post‐annealed C 60 molecules on Si(100)‐2×1 surfaces has been investigated using scanning tunneling microscopy in ultrahigh vacuum. The images reveal that the adsorption characteristics of the post‐annealed adsorbates are different from their pre‐annealed counterparts. The post‐annealed C 60 molecules bond either to the top of the dimer rows or to the missing dimer defects, while the pre‐annealed molecules predominantly occupy the four‐dimer sites in the troughs. The apparent size and height of post‐annealed C 60 molecules are smaller than those of the pre‐annealed ones. Our observations suggest that the post‐annealed C 60 molecules are chemisorbed on the surface, because the molecules covalently bond to Si atoms during the sample annealing. In contrast, the adsorption of the pre‐annealed C 60 molecules can be explained by a dipole‐induced‐dipole interaction between the molecules and the Si(100) surface, i.e., physisorption.