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GaAs Quantum Dots
Author(s) -
Nozik A.J.,
Uchida H.,
Kamat P.V.,
Curtis C.
Publication year - 1993
Publication title -
israel journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 54
eISSN - 1869-5868
pISSN - 0021-2148
DOI - 10.1002/ijch.199300004
Subject(s) - chemistry , quantum dot , nanotechnology , chemical physics , materials science
GaAs quantum dots have been prepared by reacting gallium acetylacetonate with trimethylsilylarsine in triethylene glycol ether at 216 K. The colloidal dispersion of GaAs nanocrystals has been characterized by transmission electron microscopy, electron diffraction, ultrafiltration, optical absorption and photoluminescence spectroscopy, and transient pump‐probe spectroscopy; the spectral data were also fitted to a model that accounts for the size‐dependent optical properties of a Gaussian distribution of particle sizes. Our results indicate that the spectral region above 470 nm can be assigned solely to GaAs nanocrystals having a mean diameter of 40.0 Å with a standard deviation of 9.7 Å. The origin of spectral features below 470 nm has not yet been determined conclusively.

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