Premium
Semiconductor‐Oxide Heterojunctions as Electrodes in Photoelectrochemical Cells
Author(s) -
Decker F.,
Melsheimer J.,
Gerischer H.
Publication year - 1982
Publication title -
israel journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 54
eISSN - 1869-5868
pISSN - 0021-2148
DOI - 10.1002/ijch.198200038
Subject(s) - ohmic contact , chemistry , semiconductor , oxide , heterojunction , electrode , photoelectrochemistry , photoelectrochemical cell , layer (electronics) , electrochemistry , schottky barrier , optoelectronics , inorganic chemistry , materials science , diode , electrolyte , organic chemistry
The use of semiconductor‐oxide Schottky barriers as electrodes in photoelectrochemical cells has been investigated. The conducting oxide has the function of protecting the semiconductor surface from corrosion and of driving the electrochemical reaction. Since the oxide layer is only a few hundred Å thick, the ohmic resistance of this layer is low and nearly 90% of the incoming light is transmitted through it. Regenerative photoelectrochemical cells based on n‐Si‐SnO 2 junctions have shown solar efficiencies around 4%. Further improvements will require the addition of a catalyst to the oxide surface in order to increase the speed of the electrochemical reaction.