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Cu Nanoparticles on TiN by Electroless Deposition: Surface‐Mediated Diameter Control and Application to Si Nanowires Growth
Author(s) -
Roussey Arthur,
Martinez Eugénie,
Copéret Christophe,
Thieuleux Chloé,
Jousseaume Vincent
Publication year - 2017
Publication title -
helvetica chimica acta
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.74
H-Index - 82
eISSN - 1522-2675
pISSN - 0018-019X
DOI - 10.1002/hlca.201700018
Subject(s) - nanoparticle , tin , nanowire , chemistry , nanotechnology , chemical engineering , yield (engineering) , silicon , deposition (geology) , vapor–liquid–solid method , aqueous solution , galvanic cell , metallurgy , materials science , organic chemistry , paleontology , sediment , engineering , biology
Cu Nanoparticles on TiN coated silicon substrates were prepared from well‐defined molecular precursors [CuO t Bu] 4 in non‐aqueous solutions. The formation of nanoparticles takes place via galvanic displacement and allows for the formation of narrowly distributed Cu nanoparticles with controlled size ranging from 8 to 35 nm through the control of the oxidation state of the TiN surface. The activity of these nanoparticles arrays in low temperature Si nanowires growth by the vapor‐solid‐solid mechanism was also investigated and larger Cu nanoparticles were found to yield higher Si nanowires density.