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The electron spin resonance spectrum of the triphenylsilyl radical formed by the X ‐irradiation of monocrystalline triphenylsilane
Author(s) -
Geoffroy M.,
Lucken E. A. C.
Publication year - 1970
Publication title -
helvetica chimica acta
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.74
H-Index - 82
eISSN - 1522-2675
pISSN - 0018-019X
DOI - 10.1002/hlca.19700530418
Subject(s) - chemistry , radical , electron paramagnetic resonance , hyperfine structure , irradiation , monocrystalline silicon , tensor (intrinsic definition) , photochemistry , spin (aerodynamics) , dipole , electron , nuclear magnetic resonance , atomic physics , silicon , organic chemistry , physics , quantum mechanics , mathematics , nuclear physics , pure mathematics , thermodynamics
The electron spin resonance spectrum of X ‐irradiated monocrystalline triphenylsilane has been studied at room temperature. The main radical species present is the triphenylsilyl radical, formed both as isolated radicals and pair‐wise trapped radicals. For the radical pairs the analysis of the dipole coupling tensor indicates an inter‐radical distance of 7.36 Å. The 29 Si hyperfine tensor has been determined, and the values discussed in terms of the electronic structure of the triphenylsilyl radical.