Open AccessFabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application
Author(s) -
Subramanian Balachandran,
Veerappan Manimuthu,
Rajan Karthikeyan,
Chen Zheming,
Hu Chengzhi,
Wang Fei,
Wang Feng,
Yang Mingshu
Publication year - 2020
Publication title -
global challenges
Language(s) - English
Resource type - Journals
ISSN - 2056-6646
DOI - 10.1002/gch2.202000002
Subject(s) - materials science , nanocrystalline material , scanning electron microscope , nanotechnology , pseudocapacitor , semiconductor , supercapacitor , transmission electron microscopy , x ray photoelectron spectroscopy , fabrication , chemical engineering , band gap , indium , optoelectronics , capacitance , composite material , chemistry , electrode , medicine , alternative medicine , pathology , engineering
Abstract Transition metal orthovanadates are emerging 2D materials for promising electrochemical energy storage applications. Facile hydrothermal method for nanocrystalline indium vanadate (InVO 4 ) semiconducting materials’ fabrication is economical because of its direct chemical synthesis. X‐ray diffraction studies, field emission scanning electron microscope (SEM) images, transmission electron microscopy (TEM), and photoelectron X‐ray spectrum are used to describe the semiconductor materials as synthesized. InVO 4 microspheres have attracted a lot of attention in the energy and environmental sector. These microsphere‐derived semiconductor materials are recognized to offer the advantages of their large surface area, tunable pore sizes, enhanced light absorption, efficient carrier (electron–hole) separation, superior electronic and optical behavior, and high durability. From the results of SEM and TEM, InVO 4 shows a microsphere construction with a mixture of nanosized particles. Diffuse reflectance UV–visible measurements are used to determine the bandgap, and it is found to be 2.1 eV for InVO 4 . The electrochemical analysis reveals a superior performance of the pseudocapacitor with hydrothermally derived microspheres of InVO 4 . Alongside an improved pseudocapacity, developed after 4000 cycles, it has excellent cycling stability with a retention of ≈94% of its original specific capacitance efficiency.