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Effect of Contact Method between Interconnects and Electrodes on Area Specific Resistance in Planar Solid Oxide Fuel Cells
Author(s) -
Wu W.,
Wang G. L.,
Guan W. B.,
Zhen Y. F.,
Wang W. G.
Publication year - 2013
Publication title -
fuel cells
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.485
H-Index - 69
eISSN - 1615-6854
pISSN - 1615-6846
DOI - 10.1002/fuce.201300028
Subject(s) - materials science , cathode , anode , stack (abstract data type) , contact resistance , electrode , current collector , interconnection , layer (electronics) , solid oxide fuel cell , oxide , planar , isothermal process , sheet resistance , composite material , optoelectronics , temperature cycling , thermal , electrical engineering , metallurgy , computer science , electrolyte , chemistry , computer graphics (images) , computer network , engineering , thermodynamics , programming language , physics , meteorology
In this work, interconnect/electrode sheet/interconnect sandwiches are assembled by designing interfacial contact between interconnects and electrodes for planar solid oxide fuel cells (SOFCs). Their area specific resistance (ASR) values of different contact methods under isothermal oxidation and thermal cycling are recorded by four‐point method. The ASR of SUS430/Ni–YSZ/SUS430 anode sandwich with NiO current collecting layer is close to that of anode sandwich without NiO current collecting layer during isothermal operation, but smaller and more stable during thermal cycling. Meanwhile, the lowest ASR is obtained in SUS430/LSM–YSZ/SUS430 cathode sandwich with LSM coated interconnect and LSM current collecting layer among various contact methods between interconnects and cathodes, and remains constant under isothermal oxidation and thermal cycling. Contact resistance between cathodes and interconnects is the main source of the SOFC stack resistance. A real stack with three anode‐supported cells is assembled and tested under thermal cycling to verify the effect of different contact methods between interconnects and electrodes on performance of stack repeating unit. The degradation rate and ASR values of repeating unit inside the stack indicate that the contact between LSM coated interconnect and LSM current collecting layer on cathode side is the optimized contact.