Open AccessRole of surface microstructure of Mo back contact on alkali atom diffusion and Ga grading in Cu(In,Ga)Se 2 thin film solar cells
Author(s) -
Gong Junbo,
Kong Yifan,
Li Jianmin,
Wang Xiangqi,
Que Yande,
Zhang Zengming,
Ding Zejun,
Xiao Xudong
Publication year - 2019
Publication title -
energy science and engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.638
H-Index - 29
ISSN - 2050-0505
DOI - 10.1002/ese3.304
Subject(s) - copper indium gallium selenide solar cells , microstructure , materials science , sputtering , solar cell , molybdenum , thin film , alkali metal , nanocrystalline material , sputter deposition , substrate (aquarium) , mineralogy , metallurgy , nanotechnology , chemistry , optoelectronics , organic chemistry , oceanography , geology
Abstract While the major function of molybdenum (Mo) back contact on soda‐lime glass ( SLG ) substrate in Cu(In,Ga)Se 2 ( CIGS ) solar cells is to provide good adhesion and good conductivity, its role as the transportation channel for alkali elements from SLG substrate to CIGS layer has often been overlooked. In this work, we have intentionally fabricated tri‐layered structure in contrast to the conventional bi‐layered structure for Mo back contact with the microstructure of the thin topmost Mo layer manipulated by the Ar pressure and water vapor during sputtering deposition. It has been discovered that the CIGS solar cell conversion efficiency can be greatly affected by this thin topmost Mo layer of the back contact. Investigations on the elemental depth profiles in the CIGS devices and the chemical states of Mo on the back contact surfaces have revealed that the surface layer of Mo back contact has a strong effect on the diffusion of alkali elements from SLG into CIGS absorber layer, which in turn influences the formation of Ga gradient in the CIGS layer and thus the solar cell performance. It was revealed that Mo( OH ) 6 and MoO 3 formed on the surface of Mo back contact play a key role in determining the K atom distribution and Ga gradient. A reaction mechanism was also proposed.